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?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 absolute maximum ratings* t a =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2. these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter value units v ceo collector-emitter voltage -50 v v cbo collector-base voltage -50 v v ebo emitter-base voltage -3.0 v i c collector current - continuous -100 ma t j , t stg junction and storage temperature -55 ~ +150 c symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage * i c = -1.0ma, i b = 0 -50 v v (br)cbo collector-base breakdown voltage i c = -100 a, i e = 0 -50 v i ceo collector cutoff current v cb = -10v, i e = 0 v cb = -35v, i e = 0 -10 -50 na na i cbo emitter cutoff current v eb = -3.0v, i c = 0 -50 na on characteristics h fe dc current gain i c = -100 a, v ce = -5.0v i c = -1.0ma, v ce = -5.0v i c = -10ma, v ce = -5.0v 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800 v ce(sat) collector-emitter saturation voltage i c = -10ma, i b = -1.0ma -0.3 v v be(on) base-emitter on voltage i c = -1.0ma, v ce = -5.0v -0.85 v small signal characteristics f t current gain bandwidth product i c = -500 a, v ce = -5.0v, f = 20mhz 40 mhz c cb collector-base capacitance v cb = -5.0v, i e = 0, f = 100khz 4.0 pf h fe small-signal current gain i c = -1.0ma, v ce = -5.0v, f = 1.0khz 5086 5087 150 250 600 900 nf noise figure i c = -100 a, v ce = -5.0v r s = 3.0k ? , f = 1.0khz i c = -20 a, v ce = -5.0v r s = 10k ? f = 10hz to 15.7khz 5086 5087 5086 5087 3.0 2.0 3.0 2.0 db db db db 2n5086/2n5087/mmbt5087 pnp general purpose amplifier this device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50ma. sot-23 1. base 2. emitter 3. collector 1 2 3 mark: 2q to-92 1 1. emitter 2. base 3. collector
?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 thermal characteristics t a =25 c unless otherwise noted * device mounted on fr-4 pcb 1.6? 1.6? 0.06." symbol parameter max. units 2n5086 2n5087 *mmbt5087 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 c/w
?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 typical characteristics figure 1. typical pulsed current gain vs collector current figure 2. collector-emitter saturation voltage vs collector current figure 3. base-emitter saturation voltage vs collector current figure 4. base-emitter on voltage vs collector current figure 5. collector cutoff current vs ambient temperature figure 6. input and output capacitance vs reverse voltag 0.01 0.03 0.1 0.3 1 3 10 30 100 50 10 0 15 0 20 0 25 0 30 0 35 0 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5v cb 0. 1 1 1 0 0 0.05 0. 1 0.15 0. 2 0.25 0. 3 i - collector current (ma) v - collec tor em itte r voltage (v) c ce s a t = 10 25 c - 40 c 125 c 0.1 1 10 50 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - ba se em itte r voltage (v) c be s a t 25 c - 40 c 125 c = 10 0.1 1 10 25 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c be o n v = 5v ce 25 c - 40 c 125 c 25 50 75 100 125 0.01 0. 1 1 10 10 0 t - a mbi e n t t emp er at ur e ( c) i - collector current (na) a cb o v = 40v cb 048121620 0 4 8 12 16 20 reverse bias voltage (v) capacitance (pf) f = 1 mhz c obo c ib o
?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 typical characteristics (continuce) figure 7. gain bandwidth product vs collector current figure 8. noise figure vs frequency figure 9. wideband noise frequency vs source resistance figure 10. power dissipation vs ambient temperature figure 11. equivalent input noise current vs collector current figure 12. equivalent input noise voltage vs collector current 0.1 1 10 100 0 50 100 150 200 250 300 350 i - collector current (ma) f - gain bandwidth product (mhz) v = 5v ce c t ? ? ? ? 100 1000 10000 1000000 0 1 2 3 4 5 f - frequency (hz) nf - noise figure (db) v = 5v ce i = - 250 a, r = 5.0 k ? c s i = - 500 a, r = 1.0 k ? c s i = - 20 a, r = 10 k ? c s ? ? ? ? 1,000 2,000 5,000 10,000 20,000 50,000 100,000 0 2 4 6 8 r - source resistance ( ) nf - noise figure (db) v = 5v bandwidt h = 15.7 khz ce i = 10 a c i = 100 a c s ? ? ? ? ? 0 2 5 50 75 100 125 150 0 125 250 375 500 625 temperature ( c) p - power dissipation (mw) d o to-92 sot-23 0.001 0.01 0 .1 1 0.1 0.2 0.5 1 2 5 10 i - collector current (ma) i - equivalent input noise current (pa/ hz) v = - 5.0v ce i , f = 1 0 0 hz n c n 2 i , f = 1 . 0 k h z n i , f = 1 0 k h z n ? ? ? ? 0.001 0.01 0.1 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 i - collector current (ma) e - equivalent input noise voltage ( v/ hz) v = - 5.0v ce c e , f = 100 hz n e , f = 1.0 khz n e , f = 10 khz n n 2
?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 typical characteristics (continuce) figure 13. contours of constanct narrow band noise figure figure 14. contours of constanct narrow band noise figure figure 15. bcontours of constant narrow band noise figure figure 16. contours of constant narrow band noisd figure 0.001 0.01 0.1 1 100 1,000 10, 000 100,000 1,000,000 i - collector current (ma) r - source resistance ( ) bandwidth = 1.5 khz 10 db c ? s 6.0 db 4.0 db 10 db 6.0 db 4.0 db 2.0 db v = - 5v f = 10 khz ce 1.0 db ? ? ? ? 0.001 0.01 0.1 1 100 1,000 10, 000 100,000 1,000,000 i - collector current (ma) r - source resistance ( ) 12 db c ? s 8.0 db 5.0 db 3.0 db v = - 5v f = 100 hz bandwidth = 15 hz ce 12 db 8.0 db 5.0 db ? ? ? ? 0.001 0.01 0.1 1 100 1,000 10,000 100,000 1,000,000 i - collector current (ma) r - source resistance ( ) 10 db c ? s 6.0 db 4.0 db v = - 5v f = 1.0 khz bandwidth = 150 hz ce 10 db 6.0 db 4.0 db ? ? ? ? 0.01 0.1 1 10 100 200 500 1, 000 2, 000 5, 000 10,000 i - collector current (ma) r - source resistance ( ) c ? s 6.0 db 4.0 db v = - 5v f = 10 mhz bandwi dt h = - 2 khz ce 6.0 db 4.0 db 2.0 db
?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 typical common emitter characteristics (f = 1.0khz) typical common emitter characteristics typical common emitter characteristics typical common emitter characteristics -25-20-15-10-5 0 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 v - collector-emitter voltage (v) ha ra c teris tic s r e l. to valu e, v =-5 .0v ce t = -25 c a i = 1.0 ma c ce h oe h and h fe ie f = 1.0 khz 0. 1 0 . 2 0. 5 1 2 5 1 0 0.01 0. 1 1 10 10 0 i - collector curre nt (ma) haracteristics rel. to value, i =1.0ma c t = -25 c a v = -5.0v ce c h ie f = 1.0 khz h fe h oe -60 -40 -20 0 20 40 60 80 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 t - ambient temperature ( c) characteris tics rel. to value, t = 25 c a v = -5.0v ce a h oe f = 1.0 khz h fe h ie i = 1.0 ma c h and h fe oe h ie
package dimensions 2n5086/2n5087/mmbt5087 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. b1, september 2003 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92
?2003 fairchild semiconductor corporation rev. b1, september 2003 2n5086/2n5087/mmbt5087 package dimensions (continued) 0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 0.023 0.20 min 0.40 0.03 sot-23 dimensions in millimeters
?2003 fairchild semiconductor corporation rev. i5 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? across the board. around the world.? the power franchise? programmable active droop?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging 2n5087 pnp general purpose amplifier general description back to top contents ? general description ? product status/pricing/packaging ? order samples ? models ? qualification support this device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 ma. datasheet download this datasheet e - mail this datasheet this page bookmark this page print version product product status pb-free status pricing* package type leads packing method package marking convention** 2n5087bu full production $0.025 to - 92 3 bulk line 1: 2n line 2: 5087 line 3: -&3 2n5087ta full production $0.025 to - 92 3 ammo line 1: 2n line 2: 5087 line 3: -&3 2n5087tar full production $0.025 to - 92 3 ammo line 1: 2n line 2: 5087 line 3: -&3 related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 3 product folder - fairchild p/n 2n5087 - pnp general pur p ose am p lifie r 20-au g -2007 mhtml:file://y:\cpl\08102007\fair\2n5087tar.mht
back to top models back to top qualification support click on a product for detailed qualification data 2n5087tf full production $0.025 to - 92 3 tape reel line 1: 2n line 2: 5087 line 3: -&3 2n5087tfr full production $0.025 to - 92 3 tape reel line 1: 2n line 2: 5087 line 3: -&3 2n5087_j18z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 5087 2n5087_j61z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 5087 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product 2n5087 is available. click here for more information . package & leads condition temperature range vcc range software version revision date pspice to-92-3 electrical/thermal -55c to 150c 0v to -50v 9.2 jan 3, 2003 product 2n5087bu 2n5087ta pa g e 2 of 3 product folder - fairchild p/n 2n5087 - pnp general pur p ose am p lifie r 20-au g -2007 mhtml:file://y:\cpl\08102007\fair\2n5087tar.mht
back to top 2n5087tar 2n5087tf 2n5087tfr 2n5087_j18z 2n5087_j61z ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 3 of 3 product folder - fairchild p/n 2n5087 - pnp general pur p ose am p lifie r 20-au g -2007 mhtml:file://y:\cpl\08102007\fair\2n5087tar.mht

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